2SC3627 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC3627

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3627

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

200

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

250

V

VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A

1.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IC=5 A;IB=0.5 A

VCB=200V ;IE=0

1.5

V

100 μA

IEBO

Emitter cut-off current

VEB=7V ;IC=0

1

mA

hFE-1

DC current gain

IC=10mA ; VCE=5V

15

hFE-2

DC current gain

IC=5A ; VCE=5V

20

80

固IN电C半H导AN体GE SEMICONDUCTOR Switching times

tr

Rise time

1.0

ts

Storage time

VCC≈150V,RL=25Ω

IB1=-IB2=0.6 A

2.5

tf

Fall time

1.0

μs

μs

μs

2

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