2SC3658 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3658 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3658
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A
2.0
V
VBEsat Base-emitter saturation voltage
IC=5A; IB=1.25A
1.5
V
ICBO
Collector cut-off current
VCB=1200V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
500 mA
hFE
DC current gain
IC=1A ; VCE=5V
8
VECF
Diode forward voltage
IF=6A
2.0
V
tf
Fall time
IC=5A ; IB1=1A;IB2=-2.5A;LB=0
0.5
μs
固电半导体
INCHANGE
SEMICONDUCTOR
2
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