2SC3659 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC3659

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3659

DESCRIPTION

·High Breakdown Voltage-

: VCES= 1700V (Min)

·Built-in Damper Didoe

APPLICATIONS

·Designed for high voltage, high power switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

1700

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current- Continuous

8

A

Collector Power Dissipation

PC

@ TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-45~150

℃

isc Website：www.iscsemi.cn

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