2SC3659 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC3659

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3659

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.25A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1.25A

ICBO

Collector Cutoff Current

VCE= 1400V; IE= 0

2.0

V

1.5

V

0.5 mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

500 mA

VECF

C-E Diode Forward Voltage

tf

Fall Time

IF= 6A

IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0

2.0

V

0.5 μs

isc Website：www.iscsemi.cn

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