2SC3658 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SC3658 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3658
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.25A
ICBO
Collector cut-off current
VCB=1200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
VECF
Diode forward voltage
IF=6A
tf
Fall time
IC=5A ; IB1=1A;IB2=-2.5A;LB=0
MIN TYP. MAX UNIT
2.0
V
1.5
V
0.5
mA
500 mA
8
2.0
V
0.5
µs
2
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