2SC3834 데이터 시트보기 (PDF) - Unisonic Technologies

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2SC3834

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC3834

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

200

V

Collector-emitter voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

8

V

Collector Current (Pulse)

IC

7

A

Base Current

IB

3

A

Collector Dissipation (TC=25°C)

PC

50

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

BVCEO

ICBO

IEBO

hFE

VCE(SAT)

VBE(SAT)

fT

Cob

TEST CONDITIONS

IC= 50mA

VCB=200V, IE=0A

VEB=8V, IC=0A

VCE=4V, IC=3A

IC=3A, IB=0.3mA

IC=3A, IB=0.3mA

IE=-0.5mA, VCE=12V, f=100MHz

VCB=10 V, IE=0A, f=1MHz

MIN TYP MAX UNIT

120

V

100 μA

100 μA

70

220

0.5 V

1.2 V

30

MHz

110

pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R203-026.C

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