2SC3832 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3832 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
fT
Transition frequency
COB
Output capacitance
Switching times
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
f=1MHz ; VCB=10V
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=200V; IC=3A
IB1=0.3A;IB2=-0.6A;
RL=66.7Ω
Product Specification
2SC3832
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
30
10
MHz
50
pF
1.0 μs
3.0 μs
0.5 μs
2
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