2SC3835 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3835 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3835
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
70
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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