2SC3853 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3853 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3853
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
80
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.5
V
100 μA
100 μA
hFE
DC current gain
IC=2A ; VCE=4V
50
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
固电半导体
INCHANGE
SEMICONDUCTOR
2
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