2SC3835 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SC3835 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3835
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=3A; IB=0.3A
VCB=200V; IE=0
VEB=8V; IC=0
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Collector output capacitance
Switching times
f=1MHz;VCB=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A
IB1=0.3A ,IB2=-0.6A
VCC=50V, RL=16.7B
MIN TYP. MAX UNIT
120
V
0.5
V
1.2
V
0.1
mA
0.1
mA
70
220
30
MHz
110
pF
0.5
µs
3.0
µs
0.5
µs
hFE Classifications
O
Y
G
70-120 100-200 160-220
2
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