2SC3834 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC3834 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistor
www.jmnic.com
2SC3834
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V;ftest= 1.0MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
MIN TYP. MAX UNIT
120
V
0.5
V
1.2
V
100 μA
100 μA
70
220
30
MHz
110
pF
0.5 μs
3.0 μs
0.5 μs
hFE Classifications
O
Y
G
70-120 100-200 160-220
2
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