2SC3962 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SC3962

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

VCB=500V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

Product Specification

2SC3962

MIN TYP. MAX UNIT

400

V

500

V

7

V

0.5

V

1.3

V

100 μA

100 μA

15

50

2

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