2SC3979 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC3979 Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter voltage
VCEsat Collector-emitter saturation voltage
VBEsat Emitter-base saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
CONDITIONS
IC=10mA , IB=0
IC=0.8A IB=0.16A
IC=0.8A IB=0.16A
VCB=900V IE=0
VEB=7V; IC=0
IC=0.1A ; VCE=5V
IC=0.8A ; VCE=5V
IC=0.15A ; VCE=5V
IC=0.8A ;IB1=0.8A
IB2=-0.32A
VCC=250V
www.jmnic.com
2SC3979
MIN
TYP.
MAX UNIT
800
V
1.5
V
1.5
V
50
μA
50
μA
8
6
10
MHz
0.7
μs
2.5
μs
0.3
μs
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