2SA1607 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SA1607

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Continued from preceding page.

Parameter

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Delay Time

Rise Time

Storage Time

Fall Time

2SA1607/2SC4168

Symbol

Conditions

Cob

VCB=(–)10V, f=1MHz

VCE(sat) IC=(–)10mA, IB=(–)1mA

VBE(sat) IC=(–)10mA, IB=(–)1mA

V(BR)CBO

V(BR)CEO

V(BR)EBO

td

tr

tstg

tf

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

Ratings

Unit

min

typ max

(2.9)

pF

2.6

pF

0.08 (–)0.2 V

(–0.07)

V

0.72 (–)1.0 V

(–0.75)

V

(–)40

V

(–)20

V

(–)5

V

(14)11

20 ns

(11)10

20 ns

(80)70 180 ns

(16)15

25 ns

* : The 2SA1607/2SC4168 are classified by 10mA hFE as follows :

2SA1607 60 3 120 90 4 180

2SC4168

60 3 120 90 4 180 135 5 270

Marking 2SA1607 : YL

2SC4168 : GT

hFE rank 2SA1607 : 3, 4

2SC4168 : 3, 4, 5

Switching Time Test Circuit

5IB1=–5IB2=IC=50mA

(For PNP, the polarity is reserved.)

Unit (reisistance : Ω, capacitance : F)

No.2479-2/5

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