C4115 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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C4115

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC4115

TRANSISTOR (NPN)

FEATURES

z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

z Excellent current gain characteristics.

z Complements to 2SA1585

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

40

20

6

3

500

150

-55-150

Units

V

V

V

A

mW

℃

℃

SOT-89

1. BASE

1

2. COLLECTOR

2

3

3. EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Collector-base breakdown voltage

V(BR)CBO

Collector-emitter breakdown voltage

V(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

V(BR)EBO

ICBO

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage*

Transition frequency

*pulse test

CLASSIFICATION OF hFE

Rank

Q

IEBO

hFE

VCEsat

fT

Range

120-270

Test conditions

IC= 50μA, IE=0

IC=1mA , IB=0

IE=50μA, IC=0

VCB=30V, IE=0

VEB= 5V, IC=0

VCE=2V, IC= 0.1A

IC= 2A, IB=0.1A

VCE=2V, IC=0.5 A

F=100MHz

R

180-390

MIN TYP

MAX UNIT

40

V

20

V

6

V

0.1

μA

0.1

μA

120

560

0.5

V

200

290

MHz

S

270-560

marking

4115Q

4115R

4115S

１　

JinYu

semiconductor

www.htsemi.com

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