2SC4116 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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2SC4116 Datasheet PDF : 3 Pages
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2SC4116
TRANSISTOR (NPN)
FEATURES
z High voltage and high current
z Excellent hFE linearity
z High hFE
z Low noise
z Complementary to 2SA1586
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Junction and Storage Temperature
Value
60
50
5
150
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
NF
Test conditions
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=6V,IC=2mA
IC=100mA,IB=10mA
VCE=10V,IC=1mA,
VCB=10V,IE=0,f=1MHz
VCE=6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
MIN TYP
60
50
5
70
80
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
V
V
V
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
１
JinYu
semiconductor
www.htsemi.com
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