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2SC4539 데이터 시트보기 (PDF) - Toshiba
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2SC4539
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Toshiba
2SC4539 Datasheet PDF : 5 Pages
1
2
3
4
5
10
1.0
0.8
I
C
– V
CE
8
6
Common emitter
Ta
=
25°C
4
0.6
3
2
0.4
IB
=
1 mA
0.2
0
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
10
Common emitter
3
IC/IB
=
20
1
0.3
0.1
0.03
0.01
1
Ta
=
100°C
25
-
25
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
2SC4539
1000
300
h
FE
– I
C
Ta
=
100°C
100
25
-
25
30
10
3
Common emitter
VCE
=
2 V
1
1
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
V
BE (sat)
– I
C
100
Common emitter
30
IC/IB
=
20
10
3
1
0. 3
0. 1
1
Ta
= -
25°C
25
100
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
3
2002-08-13
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