2SC4539 데이터 시트보기 (PDF) - Toshiba

부품명

상세내역

제조사

2SC4539

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

IC – VBE

1.2

Common emitter

Ta = 25°C

1.0

0.8

0.6

Ta = 100°C

25

-25

0.4

0.2

0

0

2

4

6

8

10

Base-emitter voltage VBE (V)

1.4

1.2

(1)

1.0

PC – Ta

(1) Mounted on ceramic substrate

(250 mm2 ´ 0.8 t)

(2) No heat sink

0.8

0.6 (2)

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

2SC4539

Safe Operating Area

10

5

3 IC max (pulse)*

IC max (continuous)

1

*t =1 ms

*10 ms

*100 ms

0.5

0.3

**:

DC operation

Ta = 25°C

40 ´ 50 ´ 0.8 t

**: DC operation

0.1

Ta = 25°C

250 mm2 ´ 0.8 t

**: DC operation

0.05 Ta = 25°C

0.03 *: Single nonrepetitive pulse

Ta = 25°C

**: Mounted on ceramic substrate

Curves must be derated

0.01 linearly with increase in

temperature

0.005

0.1

0.3

1

3

10

VCEO

max

30

100

Collector-emitter voltage VCE (V)

4

2002-08-13

Share Link: