C4531 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4531 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A
VBEsat Base-emitter saturation voltage
IC=7A; IB=1.7A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
VF
Diode forward voltage
IF=7A
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=7A;IB1 =1.4A
IB2 =-2.8A; RL=28.5Ω
Product Specification
2SC4531
MIN TYP. MAX UNIT
5
V
5
V
1.5
V
10
μA
66
100 200 mA
8
210
pF
1.5
1.8
V
1
3
MHz
1.8
2.5
μs
0.1
0.2
μs
2
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