2SC4381 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

2SC4381

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4381

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 150V(Min)

·DC Current Gain-

: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A)

·Complement to Type 2SA1667

APPLICATIONS

·Designed for TV vertical output ,audio output driver and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

2

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1

A

25

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: