2SC4388 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4388 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IE=-0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4Ω
IB1=- IB2=1A
VCC=40V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SC4388
MIN TYP. MAX UNIT
180
V
2.0
V
10
μA
10
μA
50
180
20
MHz
300
pF
0.50 μs
1.80 μs
0.60 μs
2
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