2SC4421 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4421 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4421
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IBB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1.2
A
2
W
40
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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