2SC4460 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4460 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4460
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.2A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1.0MHz
IC= 1.2A ; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 7A , IB1= 1.4A; IB2= -2.8A
RL= 28.6Ω; VCC= 200V
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0 V
1.5 V
10 μA
10 μA
15
50
8
160
pF
18
MHz
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
isc Website：www.iscsemi.cn
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