2SC4467 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4467 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A;RL=10Ω
IB1=- IB2=0.4A
VCC=40V
hFE Classifications
O
P
Y
50-100
70-140
90-180
Product Specification
2SC4467
MIN TYP. MAX UNIT
120
V
1.5
V
10
μA
10
μA
50
180
200
pF
20
MHz
0.13
Μs
3.50
Μs
0.32
Μs
2
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