2SC4468 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4468 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4468
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
140
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.5
V
10
μA
10
μA
hFE
DC current gain
IC=3A ; VCE=4V
50
180
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
250
pF
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
hFE Classifications
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
0.24
μs
4.32
μs
0.40
μs
O
P
Y
50-100 70-140 90-180
2
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