2SC4423 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SC4423

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4423

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=:

V(BR)EBO Emitter-base breakdown voltage

VCEX(SUS) Collector-emitter sustaining voltage

VCEsat Collector-emitter saturation voltage

IE=1mA; IC=0

IC=6A;IB1=0.6A;

IB2=-2.4A;L=500µH

IC=8A;IB=1.6 A

VBEsat

Base-emitter saturation voltage

IC=8A;IB=1.6 A

ICBO

Collector cut-off current

VCB=400V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1.6A ; VCE=5V

hFE-2

DC current gain

IC=8A ; VCE=5V

hFE-3

DC current gain

IC=10mA ; VCE=5V

fT

Transition frequency

IC=1.6A ; VCE=10V

COB

Output capacitance

VCB=10V;f=1MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=10A;RL=20D

IB1=2A;- IB2=4A

VCC=200V

hFE-1 classifications

L

M

N

15-30 20-40 30-50

MIN TYP. MAX UNIT

500

V

400

V

7

V

400

V

0.8

V

1.5

V

10

µA

10

µA

15

50

10

10

20

MHz

160

pF

0.5

µs

2.5

µs

0.3

µs

2

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