SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4448
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
VBEsat
Base-emitter saturation voltage
IC=50mA ;IB=5mA
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
COB
Collector output capacitance
IC=10mA ; VCE=10V
IC=100mA ; VCE=10V
IC=40mA ; VCE=10V
f=1MHz;VCB=30V
MIN TYP. MAX UNIT
1.0
V
1.0
V
100
µA
10
µA
40
200
20
240
MHz
3.3
pF
2