2SC4467 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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2SC4467

Silicon NPN Triple Diffused Planar Transistor

Thinki Semiconductor Co., Ltd. 

2SC4467

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

COB

Output capacitance

VCB=160V; IE=0

VEB=6V; IC=0

IC=3A ; VCE=4V

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

hFE Classifications

O

P

Y

IC=0.5A ; VCE=12V

IC=4A;RL=10C

IB1=- IB2=0.4A

VCC=40V

50-100

70-140

90-180

Mechanical Dimensions

TO-3PN

®

MIN TYP. MAX UNIT

120

V

1.5

V

10

µA

10

µA

50

180

200

pF

20

MHz

0.13

As

3.50

As

0.32

As

© 2006 Thinki Semiconductor Co.,Ltd.

Dimensions in Millimeters

Page 2/2

http://www.thinkisemi.com/

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