DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC4797 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명
상세내역
제조사
2SC4797
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SC4797 Datasheet PDF : 4 Pages
1 2 3 4
2SC4797
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO 900 —
V
IC = 10 mA, RBE =
voltage
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
V
IE = 10 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
500 µA VCE = 1700 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
35
VCE = 5 V, IC = 1A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat)
5
voltage
V
IC = 7 A, IB = 1.4 A
———————————————————————————————————————————
Base to emitter saturation
VBE(sat)
1.5
V
IC = 7 A, IB = 1.4 A
voltage
———————————————————————————————————————————
Fall time
tf
0.6
µs
ICP = 7 A, IB1 = 1.4 A
IB2 = –2.5 A, fH = 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
20
(100 V, 20 A)
f = 15.75 kHz
Ta = 25 °C
16
For picture tube arcing
12
8
4
(900 V, 3 A)
0.5 mA
0
400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]