2SC4744 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4744 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4744
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
6
V
IC(peak) Collector Current-Peak
IC(surge) Collector Current-Surge
ID
C-E Diode Forward Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
7
A
16
A
7
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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