INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4745
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
tf
Fall Time
ICP= 5A , IB1= 1A; fH= 64kHz
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
500 μA
7
30
0.4 μs
isc Website:www.iscsemi.cn
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