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2SC4793 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC4793
Iscsemi
Inchange Semiconductor Iscsemi
2SC4793 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A IB=50mA
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
Product Specification
2SC4793
MIN TYP. MAX UNIT
230
V
1.5
V
1.0
V
1.0 μA
1.0 μA
100
320
20
pF
100
MHz
2

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