2SC5075 데이터 시트보기 (PDF) - Toshiba

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2SC5075

Silicon NPN Triple Diffused Type Transistor

Toshiba 

2SC5075

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5075

Switching Regulator and High-Voltage Switching

Applications

High-Speed DC-DC Converter Applications

Industrial Applications

Unit: mm

• High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max)

• High breakdown voltage: VCEO = 400 V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

500

V

Collector-emitter voltage

VCEO

400

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

2

A

Base current

IB

0.5

A

Collector power dissipation

Junction temperature

PC

1.3

W

Tj

150

°C

JEDEC

―

Storage temperature range

Tstg

−55 to 150

°C

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

TOSHIBA

2-8M1A

temperature/current/voltage and the significant change in

Weight: 0.55 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

1

2006-11-10

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