2SC4877 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SC4877 Datasheet PDF : 4 Pages
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2SC4877
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
—
—
V IE = 400 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500 µA VCE = 1500 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
—
—
25
— VCE = 5 V, IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat) —
—
5
voltage
V IC = 7 A, IB = 1.4 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat) —
—
1.5 V IC = 7 A, IB = 1.4 A
———————————————————————————————————————————
C to E diode forward voltage
VECF
—
—
3.0 V IF = 8 A
———————————————————————————————————————————
Fall time
tf
—
—
0.5
µs ICP = 7 A, IB1 = 1.4 A
IB2 ≈ –2.5 A, fH = 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Area of Safe Operation
20
(100 V, 20 A)
f = 15.75 kHz
Ta = 25 °C
16
For picture tube arcing
12
8
4
(800 V, 4 A)
0.5 mA
0
400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)
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