2SC5195 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SC5195

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

NEC => Renesas Technology 

DATA SHEET

SILICON TRANSISTOR

2SC5195

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES

• Low Voltage Operation, Low Phase Distortion

• Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

• Large Absolute Maximum Collector Current

IC = 100 mA

• Supercompact Mini Mold Package

ORDERING INFORMATION

PART NUMBER QUANTITY

PACKING STYLE

2SC5195

2SC5195-T1

In-bulk products

(50 pcs.)

Taped products

(3 Kpcs/Reel)

Embossed tape 8 mm wide.

Pin 3 (Collector) face to perforation side of

the tape.

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

PT

Tj

Tstg

RATING

9

6

2

100

125

150

–65 to +150

UNIT

V

V

V

mA

mW

˚C

˚C

PACKAGE DRAWINGS

(Unit: mm)

1.6±0.1

0.8±0.1

2

3

1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P10398EJ2V0DS00 (2nd edition)

(Previous No. TD-2488)

Date Published August 1995 P

Printed in Japan

©

1994

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