2SC5195 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SC5195

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

NEC => Renesas Technology 

2SC5195

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

SYMBOL

CONDITION

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

Emitter Cutoff Current

DC Current Gain

Insertion Power Gain

Insertion Power Gain (1)

IEBO

hFE

|S21e|2

|S21e|2

VEB = 1 V, IC = 0

VCE = 1 V, IC = 3 mANote 1

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

Noise Figure (2)

NF

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

Noise Figure (1)

NF

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

Gain Bandwidth Product (1)

fT

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

Collector Capacitance

Cre

VCB = 1 V, IE = 0, f = 1.0 MHzNote 2

MIN.

80

3

4.5

TYP.

4

8

1.7

1.5

5

9.5

0.7

MAX.

100

100

160

2.5

0.8

UNIT

nA

nA

dB

dB

dB

dB

GHz

GHz

pF

Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE Classification

Rank

Marking

hFE

FB

88

80 to 160

2

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