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2SC5132A 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC5132A
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SC5132A Datasheet PDF : 4 Pages
1 2 3 4
2SC5132A
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCES = 1500 V, IC = 8 A
• Built–in damper diode type
• Isolated package
TO-3P•FM
TO–3PFM (N)
C
B
1. Base
2. Collector
1
2
3. Emitter
E
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
VCES
1500
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC
8
A
———————————————————————————————————————————
Collector surge current
ic(surge)
16
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Diode current
ID
6
A
———————————————————————————————————————————
Note: 1. Value at Tc = 25°C

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