2SC5132A 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SC5132A Datasheet PDF : 4 Pages
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2SC5132A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
—
—
V
IE = 400 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500 µA
VCE = 1500 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
—
—
25
—
VCE = 5 V, IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat) —
—
5
voltage
V
IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat) —
—
1.5 V
IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Forward voltage of damper
diode
VECF
—
—
2.0 V
IF = 6 A
———————————————————————————————————————————
Fall time
tf
—
0.2 0.4 µsec ICP = 5 A, IB1 = 1 A,
fH = 31.5kHz
———————————————————————————————————————————
Maximum Collector Power
Dissipation Curve
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Area of Safe Operation
20
f = 15.75 kHz
(100 V, 16 A)
Ta = 25 °C
For picture tube arcing
10
(800 V, 3 A)
0.5 mA
0
400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)
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