C5212(2016) 데이터 시트보기 (PDF) - Isahaya Electronics
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C5212 Datasheet PDF : 3 Pages
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DESCRIPTION
2SC5212 is a resin sealed silicon NPN epitaxial transistor.
It designed with high collector current, small VCE(sat).
Complementary with 2SA1946.
FEATURE
●Small package for easy mounting
●High collector current ICM=1000mA
●Low collector to emitter saturation voltage
VCE(sat)=0.2V typ
●Excellent linearity of DC forward current gain.
●High gain band with product fT=180MHz typ
APPLICATION
Small type motor drive, relay drive, power supply
〈SMALL-SIGNAL TRANSISTOR〉
2SC5212
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.4
1.6
Unit：ｍｍ
1.5
①②③
0.5
0.4
1.5
3.0
0.4
MARKING
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
JEITA：SC-62
JEDEC：SOT-89
MAXIMUM RATINGS（Ta=25℃）
Parameter
Symbol
Collector to Base voltage
VCBO
Emitter to Base voltage
VEBO
Collector to Emitter voltage
VCEO
Collector current
IC
Peak collector current
ICM
Collector dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Ratings Unit
25
V
4
V
20
V
700
mA
1000
mA
500
mW
+150
℃
-55～+150 ℃
MARKING
TYPE NAME
hFE ITEM
UF
LOT No.
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to B breakdown voltage
E to B breakdown voltage
C to E breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain *
C to E Saturation Voltage
Gain bandwidth product
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
IC=10μA , IE=0mA
IE=10μA , IC=0mA
IC=100μA , RBE=∞
VCB=25V, IE=0mA
VEB=2V, IC=0mA
VCE=4V, IC=100mA
IC=500mA , IB=25mA
VCE=6V, IE=-10mA
Limits
Unit
Min Typ Max
25
-
-
V
4
-
-
V
20
-
-
V
-
-
1
μA
-
－
1
μA
150
－
800
－
-
0.2
0.5
V
-
180
-
MHz
※： It shows hFE classification at right table.
Item
E
F
G
hFE
150～300 250～500 400～800
ISAHAYA ELECTRONICS CORPORATION
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