C5212(2016) 데이터 시트보기 (PDF) - Isahaya Electronics

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C5212
(Rev.:2016)

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

Isahaya Electronics 

TYPACAL CHARACTERISTICS

COLLECTOR DISSIPATION

VS AMBIENT TEMPERATURE

600

500

400

300

200

100

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta(℃)

〈SMALL-SIGNAL TRANSISTOR〉

2SC5212

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05mA

IB=0

ISAHAYA ELECTRONICS CORPORATION

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