Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
2SC5354(2013) 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
2SC5354
(Rev.:2013)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC5354 Datasheet PDF : 4 Pages
1
2
3
4
I
C
– V
CE
10
Common emitter
Tc = 25°C
8
2000
6
4
1500
1000
800
600
400
200
2
100
IB
=
50 mA
0
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
V
BE (sat)
– I
C
10
Tc
= −
55°C
1
25°C
100°C
0.1
Common emitter
IC/IB = 5
0.01
0.001
0.01
0.1
1
10
Collector current I
C
(A)
2SC5354
1000
Common emitter
VCE = 5 V
h
FE
– I
C
100
Tc
=
100°C
10
−
55°C
25°C
1
0.001
0.01
0.1
1
Collector current I
C
(A)
10
Common emitter
IC/IB = 5
1
V
CE (sat)
– I
C
Tc
=
100°C
0.1
0.01
0.001
25°C
−
55°C
0.01
0.1
1
10
Collector current I
C
(A)
5
Common emitter
V
CE
=5V
4
I
C
– V
BE
Tc
=
100°C
3
2
25°C
−
55°C
1
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Base-emitter voltage V
BE
(V)
Safe Operating Area
10
IC max (pulsed)*
IC max (continuous)
10
μ
s
*
100
μ
s
*
1
DC operation
Tc = 25°C
1 ms
*
10 ms
*
0.1
0.01
1
100 ms
*
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
10
100
Collector-emitter voltage
VCEO max
1000
V
CE
(V)
3
2013-11-01
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]