2SC5376 데이터 시트보기 (PDF) - Toshiba

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2SC5376

Silicon NPN Epitaxial Type Transistor

Toshiba 

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5376

Audio Frequency General Purpose Amplifier Applications

For Muting and Switching Applications

2SC5376

Unit: mm

• Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.)

@IC = 10 mA/IB = 0.5 mA

• High collector current: IC = 400 mA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

15

V

Collector-emitter voltage

VCEO

12

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

400

mA

Base current

IB

50

mA

Collector power dissipation

PC

100

mW

Junction temperature

Storage temperature range

Tj

125

°C

JEDEC

―

Tstg

−55~125

°C

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

2-2H1A

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 2.4 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

1

2007-11-01

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