2SC5439 데이터 시트보기 (PDF) - Toshiba
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2SC5439 Datasheet PDF : 4 Pages
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10
Common emitter
Tc = 25°C
8
1800
IC – VCE
6
4
2
1600
1400
1200
1000
800
600
400
300
200
100
IB = 50 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
10
Common emitter
VCE (sat) – IC
3 IC/IB = 5
1
0.3
25
Tc = 100°C
0.1
−55
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
2SC5439
hFE – IC
500
300
Common emitter
VCE = 5 V
100
50
30
Tc = 100°C
25
10
−55
5
3
1
0.5
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current IC (A)
VBE (sat) – IC
10
5
Common emitter
3
IC/IB = 5
−55
1
0.5
0.3
25
Tc = 100°C
0.1
0.05
0.001 0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
8
Common emitter
VCE = 5 V
6
IC – VBE
4
2
Tc = 100°C
25 −55
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Safe Operating Area
30
IC max (pulsed)*
10
10 μs*
IC max
(continuous)
3
DC operation
1
Tc = 25°C
1 ms*
100 μs*
0.3
10 ms*
100 ms*
0.1
*: Single nonrepetitive pulse
Tc = 25°C
0.03
Curves must be derated linearly
with increase in temperature.
0.01
1
3
10
30
100
VCEO max
300 1000 3000
Collector-emitter voltage VCE (V)
3
2009-12-21
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