2SC5683 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SC5683

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Continued from preceding page.

Parameter

DC Current Gain

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Storage Time

Fall Time

2SC5683

Symbol

hFE1

hFE2

VCE(sat)

VBE(sat)

tstg

tf

Conditions

VCE=5V, IC=1A

VCE=5V, IC=20A

IC=18A, IB=4.5A

IC=18A, IB=4.5A

IC=12A, IB1=2.4A, IB2=--4.8A

IC=12A, IB1=2.4A, IB2=--4.8A

Switching Time Test Circuit

IB1

PW=20µs

D.C.≤1%

IB2

INPUT

VR

50Ω

RB

+

100µF

VBE= --2V

OUTPUT

RL=16.7Ω

+

470µF

VCC=200V

Ratings

Unit

min

typ

max

15

4

7

3

V

1.5

V

3.0

µs

0.2

µs

IC -- VCE

40

35

10.0A 9.0A 8.0A 7.0A

30

25

20

15

10

5

0

0

100

7

5

3

2

10

7

5

3

2

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0.5A

IB=0

1 2 3 4 5 6 7 8 9 10

Collector-to-Emitter Voltage, VCE -- V IT02409

hFE -- IC

VCE=5V

Ta=120°C

25°C

--40°C

1.0

0.1

2 3 5 7 1.0

2 3 5 7 10

23

Collector Current, IC -- A

IT02411

IC -- VBE

12

VCE=5V

10

8

6

4

2

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Base-to-Emitter Voltage, VBE -- V

VCE(sat) -- IC

2

IC / IB=5

10

IT02410

7

5

3

2

1.0

7

5

3

2

25°C

0.1 Ta= --40°C

7

5 120°C

3

0.1

2 3 5 7 1.0

2 3 5 7 10

Collector Current, IC -- A

23

IT02412

No.6653-2/4

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