2SC5444 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SC5444

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

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Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Storage Time

Fall Time

Switching Time Test Circuit

2SC5444

Symbol

Conditions

VCE(sat)

VBE(sat)

tstg

tf

IC=20A, IB=5A

IC=20A, IB=5A

IC=12A, IB1=2.4A, IB2=–4.8A

IC=12A, IB1=2.4A, IB2=–4.8A

PW=20µs

D.C.≤1%

I NPUT

50Ω

IB1

IB2

VR RB

+

100µF

OUTPUT

+

470µF

RL=16.7Ω

VBE=-2V

VCC=200V

Ratings

Unit

min

typ

max

5V

1.5 V

3.0 µs

0.2 µs

IC - VCE

30

28

10.0A

26

24

22

20

6.0A

5.0A

4.0A

3.0A

18

2.0A

16

14

1.0A

12

10

0.5A

8

6

9.0A 8.0A 7.0A

4

2

0

IB= 0

0

1

2

3

4

5

6

7

8

9 10

Collector-to-Emitter Voltage, VCE – V

hFE - IC

7

5

Ta=120°C

3

25°C

2

–40°C

VCE = 5V

10

7

5

3

2

1.0

7 0.1

2 3 5 7 1.0 2 3 5 7 10

Collector Current, IC – A

23 5

25

IC - VBE

VCE = 5V

20

15

10

5

0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Base-to-Emitter Voltage, VBE – V

VCE(sat) - IC

10

7

IC / IB=5

5

3

2

1.0

7

5

3

2

0.1 Ta=-40°C

7

5 120°C 25°C

3

7 0.1

2 3 5 7 1.0 2 3 5 7 10

Collector Current, IC – A

23 5

No.6102–2/4

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