2SC5623 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SC5623 Datasheet PDF : 9 Pages
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2SC5623
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
Unit
10
V
3.5
V
1
V
12
mA
50
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
10
voltage
Collector cutoff current
I CBO
—
Collector cutoff current
I CEO
—
Emitter cutoff current
I EBO
—
DC current transfer ratio
hFE
60
Collector output capacitance Cob
—
Gain bandwidth product
fT
23
Power gain
PG
14
Noise figure
NF
—
Typ
—
—
—
—
100
0.15
26
18
1.8
Max
—
1
1
10
140
0.4
—
—
2.3
Unit
V
µA
µA
µA
V
pF
GHz
dB
dB
Test Conditions
IC = 10 µA , IE = 0
VCB = 8 V , IE = 0
VCE = 3 V , RBE = ∞
VEB = 1 V , IC = 0
VCE = 2 V , IC = 10 mA
VCB = 2 V , IE = 0
f = 1 MHz
VCE = 2 V , IC = 10 mA
f = 2 GHz
VCE = 2 V , IC = 10 mA
f = 1.8 GHz
VCE = 2 V , IC = 3 mA
f = 1.8 GHz
2
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