2SC5634 데이터 시트보기 (PDF) - Isahaya Electronics
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2SC5634 Datasheet PDF : 4 Pages
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DESCRIPTION
Mitsubishi 2SC5634 is a super mini package resin sealed
silicon NPN epitaxial transistor.It is designed for high
frequency application.
FEATURE
・High gain bandwidth product.
fT=8.0GHz
・High gain,low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5634
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.5
0.5 1.5
U n i t :mm
0.5
1
3
2
APPLICATION
For TV tuners,high frequency amplifier,celluar phone
system.
MAXIMUM RATINGS (Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
15
V
VCEO Collector to Emitter voltage
6
V
VEBO Emitter to Base voltage
1.5
V
I C Collector current
50
mA
PC Collector dissipation
150
mW
Tj
Junction temperature
+125
℃
Tstg Storage temprature
-55~+125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
I CBO Collector cut off current
I EBO Emitter cut off current
hFE DC forward current gain
fT
Gain bandwidth product
Cob Collector output capacitance
｜S21｜2 Insertion power gain
NF Noise figure
VCB=10V, I E=0mA
VEB=1V, IC=0mA
VCE=5V, I C=10mA
VCE=5V, I E=10mA
VCB=5V, I E=0mA, f =1MHz
VCE=5V, I C=10mA, f =1GHz
VCE=5V, I C=5mA, f =1GHz
TERMINAL CONNECTOR
1 : BASE
2 : EMITTER
3 : COLLECTOR
JEITA:SC-59
Limits
Unit
Min
Typ
Max
1.0
μA
1.0
μA
50
250
5.0
8.0
GHz
1.0
pF
9.0
12.0
dB
1.4
dB
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