2SC5783 데이터 시트보기 (PDF) - SANYO -> Panasonic
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2SC5783 Datasheet PDF : 7 Pages
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Ordering number : ENN7323
2SC5783
NPN Epitaxial Planar Silicon Transistor
2SC5783
High-Frequency Low-Noise Amplifier
and OSC Applications
Features
Package Dimensions
• Low noise
: NF=1.5dB typ (f=2GHz).
• High cutoff frequency : fT=6.0GHz typ (VCE=1V).
: fT=10.5GHz typ (VCE=3V).
• Low operating voltage.
unit : mm
2159
• Ultraminiature and thin leadless package.
(1.4mm!0.8mm!0.6mm)
1.4
0.25
[2SC5783]
0.1
3
12
0.45
0.2
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : NL
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
9
V
4
V
2
V
80 mA
100 mW
150
°C
--55 to +150
°C
Pay attention to
handling since it is
liable to be affected by
static electricity due to
the high-frequency
process adopted.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2502 TS IM TA-100015 No.7323-1/7
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