2SC5784(2001) 데이터 시트보기 (PDF) - Toshiba
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2SC5784 Datasheet PDF : 5 Pages
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2SC5784
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5784
High-Speed Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
· High DC current gain: hFE = 400 to 1000 (IC = 0.15 A)
· Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
· High-speed switching: tf = 45 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
VCBO
40
V
VCEX
30
V
VCEO
20
V
VEBO
7
V
IC
1.5
A
ICP
2.5
IB
150
mA
PC
750
mW
(Note 1)
500
Tj
150
°C
Tstg
-55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.15 A
VCE = 2 V, IC = 0.5 A
IC = 0.5 A, IB = 10 mA
IC = 0.5 A, IB = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ~- 12 V, RL = 24 W
IB1 = -IB2 = 17 mA
Min Typ. Max Unit
¾
¾
100
nA
¾
¾
100
nA
20
¾
¾
V
400
¾ 1000
200
¾
¾
¾
¾
0.12
V
¾
¾
1.10
V
¾
18
¾
pF
¾
43
¾
¾
295
¾
ns
¾
45
¾
1
2001-12-17
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