2SC5851FBTL 데이터 시트보기 (PDF) - Renesas Electronics
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2SC5851FBTL Datasheet PDF : 7 Pages
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2SC5851
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
30
V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO
30
V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage
V(BR)EBO
5
V IE = 10 µA, IC = 0
Collector cutoff current
ICBO
0.5
µA VCB = 20 V, IE = 0
Emitter cutoff current
DC current transfer ratio
IEBO
hFE*1
0.5
µA VEB = 2 V, IC = 0
35
200
VCE = 12 V, IC = 2 mA
Collector to emitter saturation voltage
VCE(sat)
1.1
V IC = 10 mA, IB = 1 mA
Base to emitter voltage
VBE
0.75
V VCE = 12 V, IC = 2 mA
Gain bandwidth product
fT
230
MHz VCE = 12 V, IC = 2 mA
Collector output capacitance
Cob
1.6
pF VCB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
5.5
dB VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100 Ω
Notes: 1. The 2SC5851 is grouped by hFE as follows.
Grade
A
B
C
Mark
FA
FB
FC
hFE
35 to 75
60 to 120
100 to 200
Rev.1.00 Aug 10, 2005 page 2 of 6
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